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| To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE FS70VSH-03 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 4.5 1.3 1.5MAX. 8.6 0.3 9.8 0.5 3.0 +0.3 -0.5 0 -0 +0.3 1 5 0.8 B 0.5 qwe wr 2.6 0.4 2.5V DRIVE VDSS .................................................................................. 30V rDS (ON) (MAX) .............................................................. 14m ID ......................................................................................... 70A Integrated Fast Recovery Diode (TYP.) ............. 70ns q q GATE w DRAIN e SOURCE r DRAIN e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 30 10 70 280 70 70 280 70 -55 ~ +150 -55 ~ +150 1.2 4.5 Unit V V A A A A A W C C g Feb.1999 L = 30H (1.5) MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 4V ID = 35A, VGS = 2.5V ID = 35A, VGS = 4V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 30 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 10 13 0.35 60 4000 800 420 50 250 350 350 1.0 -- 70 Max. -- 0.1 0.1 1.2 14 20 0.49 -- -- -- -- -- -- -- -- 1.5 1.79 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 15V, ID = 35A, VGS = 4V, RGEN = RGS = 50 IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = -50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 TC = 25C Single Pulse tw = 10ms 100ms 80 60 1ms 10ms DC 100ms 40 20 0 0 50 100 150 200 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100 4V 3V VGS = 5V 2.5V 50 VGS = 5V 2.5V 2V DRAIN CURRENT ID (A) 80 DRAIN CURRENT ID (A) 40 4V 3V 60 PD = 70W 2V 30 1.5V 40 1.5V 20 20 TC = 25C Pulse Test 10 TC = 25C Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25C Pulse Test 20 TC = 25C Pulse Test DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 1.6 16 VGS = 2.5V 1.2 ID = 100A 12 4V 0.8 70A 8 0.4 30A 4 0 0 1.0 2.0 3.0 4.0 5.0 00 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2 TC = 25C 75C 125C 100 DRAIN CURRENT ID (A) 60 40 20 FORWARD TRANSFER ADMITTANCE yfs (S) 80 TC = 25C VDS = 10V Pulse Test 0 0 1.0 2.0 3.0 4.0 5.0 100 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 2 104 7 5 3 2 Tch = 25C f = 1MHZ VGS = 0V Ciss SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 4 3 2 td(off) tf tr 103 7 5 3 2 102 7 5 3 2 Coss Crss 102 7 5 4 3 2 td(on) Tch = 25C VDD = 15V VGS = 4V RGEN = RGS = 50 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS70VSH-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VGS (V) 5 Tch = 25C ID = 70A VDS = 15V 4 SOURCE CURRENT IS (A) 75 3 20V 25V 50 TC = 125C 75C 2 1 25 25C 0 0 20 40 60 80 100 0 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 1.6 1.2 0.8 0.4 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 D = 1.0 2 100 0.5 7 0.2 PDM 5 3 0.1 tw 2 0.05 T 10-1 0.02 7 D= tw 5 0.01 T 3 Single Pulse 2 10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) |
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